Room temperature photoluminescence spectrum from β-FeSi_2 films

摘要

Luminescent epitaxial p-FeSi_2 films were grown on the Ag-layer pre-coated Si(lll) substrates by metal-organic chemical vapor deposition method. These epitaxial p-FeSi_2 films had (101)/(110)-preferred orientation and were constructed with a triple-domain structure. The photoluminescence intensity of this (101)/(110)-orientated epitaxial β-FeSi_2 films grown at 700°C was larger than that of β-FeSi_2 films at the other deposition temperature, indicating the decreasing of the density of non-radiative recombination centers in β-FeSi_2 film. The thermal equilibrium Si vacancy is considered to act as the non-radiative recombination centers in p-FeSi_2.