High Ion Current Density Plasma Source for Ion Assisted Deposition over Extended Areas

摘要

A plasma source is described, utilizing a dc voltage between an anode and a hot hollow cathode, creating a high-density plasma. Plasma spatial distribution, ion energy, plasma neutralisation and current densities are separately tunable. Ion current densities > 0.5 mA/cm~2 have been demonstrated over coating areas > 1 m diameter. The primary advantage of the plasma compared to the ion source approach is plasma fills the vacuum chamber and couples into the evaporant. This induces partial evaporant ionization and provides uniform ion assisted deposition over extended coating areas. Optical thin films properties deposited using the hollow cathode based high ion current plasma source are described.