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Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process

机译：低温制备GaN-SiO2具有低缺损密度的界面。 I.两步远程等离子体辅助氧化沉积过程

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Choelhwyi Bae; Gerald Lucovsky;
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年度 2004
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1. Reductions in interface defects, D-it, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices [J] . Bae C, Lucovsky G Applied Surface Science . 2004,第1a4期

机译：通过后氧化等离子体辅助氮化MOS器件中GaN-SiO2界面减少界面缺陷D-it
2. Plasma-engineered Si-SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O [J] . Koh K., Lucovsky G., Niimi H. Surface & Coatings Technology . 1998,第1a3期

机译：等离子体工程设计的Si-SiO2界面：在N2O中通过低温远程等离子体辅助氧化引入单层氮原子
3. Charge Redistribotion at GaN-Ga_2O_3 Interfaces: A Microscopic Mechanism for Low Defect Density Interfaces in Remote Plasma Processed MOS Devices Prepared on Polar GaN Faces [J] . R. Therrien, H Niimi, T. Gehrke Microelectronic Engineering . 1999,第1a4期

机译：GaN-Ga_2O_3接口处的电荷再分配：在极性GaN面上制备的远程等离子体处理MOS器件中低缺陷密度接口的微观机制
4. Differences between Interfacial Bonding Chemistry at SiC-SiO_2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature Conventional Thermal Oxidation [C] . G. Lucovsky, H. Niimi International conference on silicon carbide, III-nitrides and related materials;ICSCIII-N'97 . 1998

机译：低温远程等离子体辅助氧化与高温常规热氧化制备的SiC-SiO_2界面上的界面键合化学差异
5. Statistical algorithms for circuit synthesis under process variation and high defect density. [D] . Singh, Ashish Kumar. 2007

机译：在工艺变化和高缺陷密度下电路综合的统计算法。
6. A combined molecular dynamics and experimental study of two-step process enabling low-temperature formation of phase-pure α-FAPbI3 [O] . Paramvir Ahlawat, Alexander Hinderhofer, Essa A. Alharbi, 2021

机译：两步工艺的组合分子动力学及实验研究从而实现相纯α-FAPBI3的低温形成
7. Special Articles on Technology and Its Characterization for Synthesis of Inorganic Materials. Study on Low-temperature Synthesis of Li2O-Al2O3-SiO2 Ceramics from Metal Alkoxides. I. Preparation and Crystallization of Precursor Powders in Li2O-Al2O3-SiO2 System. [O] . Hisao SUZUKI, Jun-ichi TAKAHASHI, Hajime SAITO 1991

机译：关于技术的特殊文章及其对无机材料合成的表征。金属醇盐低温合成Li2O-Al2O3-SiO2陶瓷的研究。 I. LI2O-AL2O3-SIO2系统中前体粉末的制备和结晶。
8. Airglow Calculations for Remote Sensing of Density. [R] . van tassel,roger a. 1978

机译：用于遥感密度的气辉计算。

Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process

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