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Tailoring the magnetization reversal in antidot nanostructures using lithographically engineered inhomogeneities

机译:使用光刻工程的不均匀剪裁在防陶纳米结构中的磁化反转

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We report on tailoring the magnetization reversal mechanism in engineered permalloy antidot nanostructures by lithographically introducing inhomogeneities in the form of neighboring antidots with alternate dimensions. We observed that the magnetic domain configurations are significantly altered when compared to homogeneous antidots due to the dissimilar size of adjacent antidots. The reversal process also is strongly influenced by the relative difference in the size of adjacent antidots and the thickness of the permalloy film. Our results have been further corroborated by micromagnetic simulations and low temperature measurements.
机译:我们通过用替代尺寸的相邻点状形式的光刻引入非均匀性来报告设计工程化渗透二氧化物纳米结构的磁化反转机理。我们观察到,由于相邻的反光点的异常尺寸,与均匀的极性相比,磁畴构造显着改变。反转过程也受相邻反光点尺寸的相对差异和渗透膜膜的厚度的影响。我们的结果得到了微观模拟和低温测量的进一步证实。

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