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Effects of CrRu-SiO_x underlayer with MgO intermediate layer on the microstructure and magnetic properties of FePt-C thin film

机译:CRRU-SIO_X底层对MgO中间层的影响对FEPT-C薄膜微观结构和磁性的影响

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The effect of the CrRu-SiO_x underlayer with different doping concentrations and the thickness of the CrRu underlayer on the microstructure and magnetic properties of FePt-C films were investigated. FePt films exhibited L1_0 (001) texture at various SiO_x doping concentrations. The coercivities were as large as 28 kOe and the slope of M-H loop at coercivity was approximately equal to 1, suggesting that FePt grains were well exchange decoupled. Grain size was only slightly reduced after introducing the CrRu-SiO_x underlayer. But the contact angle between the FePt grains and the MgO intermediate layer around 135° indicated the a MgO intermediate layer was not favored for smaller grains to obtain good L1_0 (001) texture. X-ray photoelectron spectroscopy in-depth profile showed that Si diffused into a whole FePt-C layer and C diffused to the film surface.
机译:研究了CRRU-SIO_X底层具有不同掺杂浓度的影响及CRRU底层厚度对微观结构和磁性的薄膜的厚度。备用膜在各种SiO_x掺杂浓度下表现出L1_0(001)纹理。凝结性与28只koe一样大,矫顽力下的m-h环的斜率大约等于1,表明缩放颗粒是井交换的结差。在引入CRRU-SIO_X底层后,粒度仅略微减少。但是,备用晶粒和MgO中间层之间的接触角约为135°,表明了MgO中间层未受较小的晶粒获得良好的L1_0(001)纹理。 X射线光电子能谱深入分布显示Si扩散到整个FEST-C层中,C扩散到膜表面上。

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