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Effect of Co doping on optical properties of chemically synthesized delafossite structured CuCrO_2 thin film

机译:CO掺杂对化学合成Delafossite结构化Cucro_2薄膜光学性质的影响

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In this communication, thin films of delafossite structured oxide material of CuCrO_2 with different concentration of cobalt (0%, 1%, 2% and 3%) have been grown on quartz substrate by sol-gel spin coating method. Prepared films were annealed at 800 °C in ambient condition for 5 hours. The microstructure, surface topography and optical properties of as prepared Co doped CuCrO_2 thin films were analyzed by using X-ray diffractometer (XRD) with Cu-Kα radiation, Atomic Force Microscopy (AFM) and UV-Vis NIR photospectrometer respectively. Maximum transparency was found to be 50% from transmittance spectra. Red shifts of optical energy band gap have been observed due to increase of carrier concentration of cobalt in CuCrO_2 thin films. The doping of cobalt in CuCrO_2 thin films have a significant influence on the optical properties of CuCrO_2 which can be used to shape up smart semiconductor devices.
机译:在这种通信中,通过溶胶 - 凝胶旋涂法在石英底物上生长了不同浓度的钴(0%,1%,2%和3%)的Cucro_2的Delafossite结构氧化物材料的薄膜。制备的薄膜在800℃下在环境条件下退火5小时。通过使用Cu-Kα辐射,原子力显微镜(AFM)和UV-Vis Nir ​​PhotospectRometer分别通过使用X射线衍射仪(XRD)来分析作为制备的Co掺杂的Cucro_2薄膜的微观结构,表面形貌和光学性质。发现最大透明度是透射谱的50%。由于Cucro_2薄膜中钴的载体浓度的增加,已经观察到光能带隙的红色移位。 Cucro_2薄膜中钴的掺杂对Cucro_2的光学性质具有显着影响,其可用于塑造智能半导体器件。

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