Effect of Argon Ion Implantation on the Microstructure and Electrical Conductivity of a Polymer Based Bakelite RPC Detector Material

摘要

Positron annihilation lifetime spectroscopy (PALS) and Doppler broadening spectroscopy were used to explore the ion implantation induced microstructural modification and the electrical conductivity of Bakelite Resistive Plate Chamber detector material used in high energy physics experiments. Samples of Bakelite polymers were exposed to 150 keV of argon (Ar) ions in the fluence of 10~(13) to10~(15) ions cm~(-2). Positron lifetime parameters viz., o-Ps lifetime and its intensity showed decrease in free volume size up on higher implantation fluences indicates the cross linking and filling up of interior voids by the implanted Ar ions. It was found that cross linking in the Bakelite polymer increases significantly with increasing implantation fluences compliment well with the X-Ray Diffraction (XRD) results. The reduction in electrical conductivity of Bakelite material after implantation is also correlated to the conducting pathways and cross links in the polymer matrix. The calculated S parameter exhibits an inverse behavior with the dc electrical conductivity.