A Comparative study of 30MeV Boron~(4+) and 60MeV Oxygen~(8+) ion irradiated Si NPN BJTs

摘要

The impact of 30MeV boron~(4+) and 60MeV oxygen~(8+) ion irradiation on electrical characteristics of 2N3773 Si NPN Bipolar junction transistors (BJTs) is reported in the present study. The transistors were decapped and irradiated at room temperature. Gummel characteristics, DC current gain and Capacitance-voltage (C-V) characteristics were studied before and after irradiation at different fluences. DC current gain has decreased significantly in both boron and oxygen ion irradiation. Also the value of capacitance decreased 3-4 times with increase in fluence. Both 30MeV boron ion and 60MeV oxygen ion induced similar extent of degradation in electrical characteristics of the transistor.