Effect of Geometry on the Screened Acceptor Binding Energy in a Quantum Wire

摘要

The effect of various Geometries G(x, y) of the GaAs/Al_xGa_(1-x)As Quantum wire like G_1: (L, L) G_2: (L, L/2) G_3: (L/2, L/4) on the binding energy of an on-center acceptor impurity has been investigated through effective mass approximation using variational technique. The observations were made including the effect of spatial dependent dielectric screening for different concentration of Al, at T=300K. The influence of spatial dielectric screening on different geometries of the wire has been compared and hence the behavior of the acceptor impurity in GaAs/Al_xGa_(1-x)As Quantum wire has been discussed.