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Doped YVO_4 Single Crystals: Growth Issues in the OFZ Technique and Investigation of Spectroscopic Properties

机译:掺杂YVO_4单晶:OFZ技术的生长问题及光谱性能研究

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Here issues related to the growth of doped YVO_4 crystal by the optical floating zone (OFZ) technique have been discussed. Focus has been on the synthesis of the starting material, melt stability and the controllability of the oxidation state of Cr ion. It has been observed that the molten zone is more stable for the growth along [100] in comparison to growth along [001]. As a result crystals grown along [001] suffer from severe overflow problem. Spectroscopic parameters of absorption and emission characteristics for the Nd and Er doped crystals have been discussed in the light of Judd-Ofelt analysis.
机译:这里讨论了与光学浮区(OFZ)技术的掺杂YVO_4晶体的生长相关的问题。重点一直在合成起始材料,熔体稳定性和Cr离子氧化状态的可控性。已经观察到,与沿[001]的生长相比,熔融区沿[100]的生长更稳定。结果沿[001]生长的晶体遭受严重的溢流问题。根据Judd -Ets分析,已经讨论了Nd和Er掺杂晶体的吸收和发射特性的光谱参数。

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