Quantum States Probed By Temperature Dependence Capacitance-Voltage Measurements For InP/GaAs Type-II Ultrathin Quantum Well

摘要

We report on the temperature dependent capacitance-voltage measurements on InP/GaAs ultrathin quantum well (QW). We observe a peak in apparent carrier distribution (ACD) profile at around the geometrical position of the QW. Peak value of the ACD profile increases, while it's width decreases with reducing temperature indicating that the peak in ACD is due to the accumulation of two dimensional electrons occupying the quantum states in ultrathin QW.