Facile Synthesis and Characterization of beta-Ga_(2)O_(3) Nanostructures via Vapor Transport Method

摘要

beta-Ga_(2)O_(3) nanostructures on a large scale were fabricated on the Silicon substrate via vapor transport method in nitrogen ambient. The growth was carried out in a tube furnace with Ga metal and Ga_(2)O_(3) powder serving as the source materials. The as synthesized products were characterized by GIXRD, SEM, HRTEM and room temperature photoluminescence. The diameter and length of beta-Ga_(2)O_(3) nanowires ranges from 60-200 nm and 10-100 micron respectively. HRTEM observations suggested that the nanowires are single crystalline with interplaner distance of 0.47 nm. The PL spectrum of beta-Ga_(2)O_(3) nanostructures exhibits a broad strong blue emission band centered at 450 nm. The possible growth and luminescence mechanism of beta-Ga_(2)O_(3) nanostructures are also discussed.