Scaling Scheme and Performance Perspective of Cross-Current Tetrode (XCT) SOI MOSFET for Future Ultra-Low Power Applications

摘要

This paper introduces a scaling scheme of the cross-current tetrode (XCT) SOI MOSFET and preliminary results. It is demonstrated that the XCT-SOI MOSFET is a promising solution for future 'ultra low-energy' LSIs suitable for medical applications. It is shown that the proposed scaling scheme yields useful design guidelines for XCT devices.