Novel SOI Structures and Characterization Strategy

摘要

Innovative SOI materials and devices are reviewed with special attention to their electrical characterization. Appropriate measurement techniques and accurate interpretation of the experimental data are necessary steps for evaluating nanosize devices. Informative examples are selected from various structures including ultrathin SOI and GeOI, strained MOSFETs, multiple-gate transistors, nanowires, tunneling and memory devices.