It is necessary to be studied attributes for controlling interface resistance especially in dash type small metal contact for high performance phase change memory cell. In this study, we will discuss about the metal electrode interface cleaning by using SC1, HF cleanings and NH_3 plasma treatment. On electrode metal surface, SC1, HF cleanings and NH_3 plasma combined treatment is most effective for the interface ohmic condition. Cross sectional view TEM data shows that the interface unknown substances were not seen. This is because SC1, HF cleaning and plasma treatment removes the metal residue acting as a lift off agent and reduces metal oxide complexes during in annealing process.
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