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Numerical correction for secondary fluorescence across phase boundaries in EPMA

机译:EPMA中跨越相边界次级荧光的数值校正

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摘要

A fast calculation method to compute secondary fluorescence near phase boundaries in electron probe microanalysis is described. Secondary fluorescence intensities are calculated by numerically integrating the equations that describe the emission of fluorescence by photoelectric absorption of primary X-rays (characteristic and bremsstrahlung) from a couple of two semi-infinite, adjacent materials, when the electron beam impacts on one of them. The reliability of the developed calculation is assessed by comparing calculated fluorescence k-ratios, as functions of the distance of the electron beam to the interface, with experimental data available in the literature and with the results of Monte Carlo simulation using code PENELOPE.
机译:描述了一种快速计算方法,用于计算电子探针微分析中的二次荧光附近相位边界。通过数值整合到通过从几个半无限相邻的材料的主要X射线(特性和Bremsstrahlung)的光电吸收来计算荧光的等式来计算二次荧光强度,当电子束对其中一个撞击时。通过比较计算的荧光K比来评估所开发计算的可靠性,作为电子束到界面的距离的函数,在文献中提供实验数据,并使用代码Penelope的Monte Carlo仿真结果。

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