Features of surface and interface with dielectric for narrow-gap A3B5 semiconductors

摘要

The possibility of InAs surface passivation by the ultrathin (5–15 nm) native oxide films is presented. The density of surface states, (from the peak low-signal conductivity) shows that the boundary between the oxide — InAs is characterized by a low density of surface states 3–5·1010 cm−2 eV−1