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An uncooled microbolometer focal plane array using heating based resistance nonuniformity compensation

机译:一种使用加热基的电阻不均匀性补偿的未冷却微电位器焦平面阵列

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This paper presents the performance evaluation of a unique method called heating based resistance nonuniformity compensation (HB-RNUC). The HB-RNUC method utilizes a configurable bias heating duration for each pixel in order to minimize the readout integrated circuit (ROIC) output voltage distribution range. The outputs of each individual pixel in a resistive type microbolometer differ from each other by a certain amount due to the resistance non-uniformity throughout the focal plane array (FPA), which is an inevitable result of the microfabrication process. This output distribution consumes a considerable portion of the available voltage headroom of the ROIC unless compensated properly. The conventional compensation method is using on-chip DACs to apply specific bias voltages to each pixel such that the output distribution is confined around a certain point. However, on-chip DACs typically occupy large silicon area, increase the output noise, and consume high power. The HB-RNUC method proposes modifying the resistances of the pixels instead of the bias voltages, and this task can be accomplished by very simple circuit blocks. The simplicity of the required blocks allows utilizing a low power, low noise, and high resolution resistance nonuniformity compensation operation. A 9-bit HB-RNUC structure has been designed, fabricated, and tested on a 384x288 microbolometer FPA ROIC on which 35μm pixel size detectors are monolithically implemented, in order to evaluate its performance. The compensation operation reduces the standard deviation of the ROIC output distribution from 470 mV to 9 mV under the same readout gain and bias settings. The analog heating channels of the HB-RNUC block dissipate around 4.1 mW electrical power in this condition, and the increase in the output noise due to these blocks is lower than 10%.
机译:本文介绍了一种称为加热电阻不均匀性补偿(HB-RNUC)的独特方法的性能评价。 HB-RNUC方法利用每个像素的可配置偏置加热持续时间,以便最小化读出集成电路(ROIC)输出电压分布范围。由于整个焦平面阵列(FPA)的电阻不均匀,电阻型微频率计中的每个单独像素的输出在一定量的情况下彼此不同,这是微制造过程的不可避免的结果。除非正确补偿,否则该输出分布消耗了ROIC的可用电压净空室的相当大部分。传统的补偿方法使用片上DAC,以向每个像素施加特定的偏置电压,使得输出分布围绕着一定点。然而,片上DAC通常占用大型硅面积,增加输出噪声,并消耗高功率。 HB-RNUC方法提出修改像素的电阻而不是偏置电压,并且可以通过非常简单的电路块来完成该任务。所需块的简单性允许利用低功率,低噪声和高分辨率电阻不均匀性补偿操作。设计,制造了9位HB-RNUC结构,并在384x288微泡计FPA ROIC上测试,其中35μm像素尺寸检测器是单片实施的,以便评估其性能。补偿操作在相同的读出增益和偏置设置下将ROIC输出分布的标准偏差降低到470mV至9 mV。 HB-RNUC块的模拟加热通道在这种情况下耗散约4.1 MW电力,并且由于这些块引起的输出噪声的增加低于10%。

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