Performance Evaluation of the Indium Zinc Oxide (IZO) Thin Films for Organic Electroluminescent Diode Applications

摘要

In this report, the transparent conducting indium zinc oxide (IZO) films (60-220nm) have been grown on hardness poly-carbonate (HPC) substrate without a post deposition annealing treatment. The direct current (dc) magnetron sputtering system was employed for the film deposition. The IZO alloy target (99.99% and 95% in purity and density, respectively) is composed of 90wt.% of In{sub}2O{sub}3 and 10wt.% of ZnO. The electrical, optical, and structural properties of these prepared films by different de powers, such as 50W, 80W and 100W, without/with the ion-assisted deposition (IAD) technique. An optimum IZO deposition condition is developed for flexible organic light-emitting device (OLED) applications. The IZO films grown at low temperature (～50°C) by the dc magnetron sputtering (100-W power) with the IAD technique were used to study the electroluminescence (EL) performance of OLEDs. Under a current density of 200(mA/cm{sup}2), the developed OLED/TZO/HPC substrate shows an excellent efficiency (5V turn-on voltage) and a luminance of 1800(cd/m{sup}2) in average, which is better than that measured with commercial indium-tin oxide (ITO) anodes and well above the electro-optical application standard.