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A 32-bit RISC microcontroller with 448K bytes of embedded flash memory

机译:一个32位RISC微控制器,具有448k字节的嵌入式闪存

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This paper describes a sub-half micron embedded flash EEPROM developed for high speed microcontroller applications. A 32-bit RISC microcontroller with 448 kbytes (3.67 Mbits) of embedded flash EEPROM is presented. High density flash memory is achieved by utilizing a single transistor NOR type cell that employs Fowler-Nordheim electron tunneling for both program and erase. The high density flash EEPROM is integrated into a high performance logic process with dual gate oxides for high performance and high voltage transistors. The array program time is greatly reduced by employing a highly parallel program operation, and data throughput is greatly enhanced by a page mode operation. Operating at 40 MHz, the embedded flash memory has an on-chip off-page access time of under 38 ns and on-page access time of under 13 ns
机译:本文介绍了为高速微控制器应用开发的半半嵌入式闪光EEPROM。 提出了一个32位RISC微控制器,带有448千字节(3.67 Mbits)的嵌入式闪存EEPROM。 通过利用单个晶体管和型电池来实现高密度闪存,用于为程序和擦除采用Fowler-Nordheim电子隧道。 高密度闪存EEPROM集成到具有用于高性能和高压晶体管的双栅极氧化物的高性能逻辑过程中。 通过采用高度并行的程序操作大大减少了阵列程序时间,并且通过页面模式操作大大增强了数据吞吐量。 嵌入式闪存在40 MHz下工作,嵌入式闪存具有以下38个NS和第13个NS的页面访问时间的片上的页面访问时间

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