Effects of lonicity on Defect Physics of Wide-Band-Gap Semiconductors

摘要

We discuss commonalities and differences for point-defect formation in various semiconductors. Point defects do not act as sources of conductivity, and self-compensation is not necessarily more severe in wide-band-gap semiconductors than it is in Si or GaAs. Deviations from stoichiometry are discussed. Effects of lattice constant and size mismatch tend to be more pronounced than trends with ionicity or band gap.