Defect states in type-II strained-layer superlattices

摘要

The electronic structure of isoelectronic defects, donors and acceptors is calculated within a full superlattice picture for InAs/GaSb and InAs/GaInSb superlattices. The wavefunctions associated with these states extend beyond a typical layer width for the superlattices. Thus band alignments between the layers as well as interface properties are predicted to dramatically change these defects' binding energy as well as their influence on superlattice electronic, optical and transport properties. Defect properties are also substantially modified by their location within a superlattice layer.