Study on photoemission mechanism for negative electron affinity GaN vacuum electron source

摘要

Negative electron affinity (NEA) gallium nitride (GaN) photocathode has many good performance characteristics, such as high quantum efficiency, low dark current and concentrated electron energy distribution and so on. NEA GaN photocathode can perfectly meet the requirement for vacuum electron source. But many of problems about NEA GaN photocathode are still unsolved at present. The photoemission mechanism for NEA GaN vacuum electron source is not completely clear yet.