Analysis of molecular resist distribution in a resist film by usingX-ray reflectivity

摘要

To obtain high resolution and sensitivity and low line width roughness (LWR), the resist film homogeneity is thought tobe the key requirement of extreme ultraviolet lithography (EUVL) resist materials. We have synthesized of a new classof chemically amplified molecular glass resists containing rigid triphenolic cores which are protected by flexible sidechains. We analyzed the electron density distribution of resist films (70 nm) by using X-ray reflectivity (XRR). Theeffects of protection ratio, high and low activation protecting groups, chain lengths have been tested using selectedmolecular resist. We discuss the effects of the chemical structures of new molecular resists on EUV lithographicperformances.