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Monolithically Integrated Double-Ended Tuning Fork- Based Oscillator with Low Bias Voltage in Air Conditions

机译:整体集成的双端调谐叉基振荡器,空气条件下具有低偏置电压

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This paper shows the results of fabrication and characterization of a CMOS oscillator with an integrated electrostatically self-excited and low voltage MEMS resonator monolithically fabricated in a commercial CMOS technology (AMS 0.35μm). Oscillation is achieved at a low DC bias voltage of 3.8V in air conditions. Measurements in vacuum conditions achieve oscillator performance even with a 0V dc polarization. In this case the effective applied voltage is 2V due to the dc polarization of the input CMOS amplifier. These low dc biasing voltages are for author's knowledge the smallest DC voltage applied in MEMS based oscillators in air and vacuum conditions.
机译:本文显示了CMOS振荡器的制造和表征的结果,其具有集成的静电自激和低压MEMS谐振器,其在商业CMOS技术(AMS0.35μm)中单整体制成。在空气条件下以3.8V的低DC偏置电压实现振荡。真空条件的测量即使具有0V直流偏振,也可以实现振荡器性能。在这种情况下,由于输入CMOS放大器的直流偏振,有效施加的电压是2V。这些低直流偏置电压用于作者的知识,在空气和真空条件下基于MEMS的振荡器中施加的最小直流电压。

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