Development of Multi-User Multi-Chip SOI CMOS-MEMS Processes

摘要

This paper presents a new method of integrating multiple MEMS designs with 40V class CMOS driver circuits in a multi-user-multi-chip manner. The multi-chip multi-user CMOS-MEMS process was done at 35 mm ?? 35 mm SOI chip. More than six different designs of SOI-bulk micromachined actuators including the pitch-tunable gratings were monolithically integrated onto the pre-fabricated high-voltage level-shifter circuits. We measured electro mechanical characteristics of the grating light valve integrated with high-voltage level-shifter and successfully demonstrated 1MHz operation.