In this paper we present a new device, the 3.3kV semi-Super Junction Reverse Conducting Insulated Gate Bipolar Transistor that can help to alleviate the voltage snapback of the Reverse Conducting IGBT while we achieve significant improvement in the on-state vs switching trade-off performance of the IGBT. The introduction of the Super Junction structure in the drift region of the RC IGBT reduces the effective on-state resistance under unipolar current conduction. This ultimately affects the voltage snapback value as well as the reverse recovery of the diode while turn off.
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