Advanced optical characterization of RCE optoelectronic devices

摘要

We have fabricated and characterized a resonant cavity enhanced (RCE) optoelectronic devices based on AlGaAs/GaAs and GaAs/InAs material system by various optic and spectroscopic methods. This includes spectral and L-I characteristics combined with near/far-field patterns and optical power analysis. The devices with 45μm diameter top contact connected by air-bridge technology were prepared. The RCE LED's include bottom AlGaAs/AlAs Bragg mirror with 90% reflectivity and 30% reflectivity top mirror at the GaAs-air interface. The influence of bottom Bragg mirror and created resonant cavity enhancement shows significant narrowing of the spectral characteristics at 850nm and 900nm, increased optical power and directivity of emitted radiation. The analysis of near/far-field patterns revealed the influences of low conductivity top GaAs layer on the shape of the LED's emitted intensity and angle cavity detuning effect to emitted radiation pattern. This contribution is concerned on the advanced RCE light emitting devices properties characterization but these devices may act also as a photodetector.