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Enabling ultra low voltage system operation by tolerating on-chip cache failures

机译:通过容忍片上缓存故障,实现超低电压系统操作

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Extreme technology integration in the sub-micron regime comes with a rapid rise in heat dissipation and power density for modern processors. Dynamic voltage scaling is a widely used technique to tackle this problem when high performance is not needed. However, the minimum achievable supply voltage is often bounded by SRAM cells since they fail at a faster rate than logic cells. In this work, we propose a novel fault-tolerant cache architecture, that by reconfiguring its internal organization can efficiently tolerate SRAM failures that arise when operating in the ultra low voltage region. Using our approach, the operational voltage of a processor can be reduced to 420mV, which translates to 80% dynamic and 73% leakage power savings in 90nm.
机译:Sub-Micron制度的极端技术集成具有迅速上升,用于现代处理器的散热和功率密度。动态电压缩放是一种广泛使用的技术,以在不需要高性能时解决这个问题。然而,最小可实现的电源电压通常由SRAM单元限制,因为它们以比逻辑单元更快的速率失效。在这项工作中,我们提出了一种新的容错高速缓存架构,即通过重新配置其内部组织可以有效地容忍在超低电压区域中操作时出现的SRAM故障。使用我们的方法,处理器的操作电压可以减少到420mV,这转化为90nm的80%动态和73%的漏电功率。

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