Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors

机译：Ni / GaN Schottky Junction红斑狼疮尿布探测器的制造与表征

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We report the novel design of an erythemal UV photodetector consisting of two Ni/GaN Schottky junctions in anti-parallel configuration. A polymer film was deposited on top of one of the junctions. This configuration enables cancellation of photocurrent for wavelengths above 300 nm.

机译：我们报告了由两种恒定UV光电探测器组成的繁殖UV光电探测器，包括两个NI / GaN Schottky联系处的反并联配置。将聚合物膜沉积在其中一个连接点的顶部。该配置使得能够将光电流取消以高于300nm的波长。

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《OptoElectronics and Communications Conference》|2009年||共2页
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中图分类 TN91-53;
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III-V semiconductors; Schottky barriers; coating techniques; gallium compounds; nickel; photodetectors; ultraviolet detectors; wide band gap semiconductors; Ni-GaN; Schottky junction; anti-parallel configuration; erythemal UV detectors; polymer film;

机译：III-V半导体;肖特基障碍;涂料技术;镓化合物;镍;光电探测器;紫外探测器;宽带隙半导体;Ni-GaN;肖特基交界处;反并联配置;红斑尿布探测器;聚合物膜;

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Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors

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