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Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors

机译：Ni / GaN肖特基结红斑紫外探测器的制备与表征

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Department of Electronic and Information Engineering

机译：电子信息工程系

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作者
Lui HF; Fong WK; Surya C;
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年度 2009
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正文语种 eng
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专利

1. Fabrication of transparent p-n junction composed of heteroepitaxially grown p-Li_(0.15)Ni_(0.85)O and n-ZnO films for UV-detector applications [J] . L. ZHUANG, K.H. WONG Applied Physics. A, Materials Science & Processing . 2007,第4期

机译：制备由外延生长的p-Li_（0.15）Ni_（0.85）O和n-ZnO薄膜组成的透明p-n结，用于紫外探测器
2. Fabrication and characterization of indium-tin-oxide/GaN visible-blind UV detectors [J] . H. F. Lui, W. K. Fong, C. Surya, Physica Status Solidi. C, Conferences and critical reviews . 2006,第6期

机译：氧化铟锡/ GaN可见盲紫外探测器的制备与表征
3. Performance Analysis of a Pt/n-GaN Schottky Barrier UV Detector [J] . Bouzid F., Dehimi L., Pezzimenti F. Journal of Electronic Materials . 2017,第11期

机译：PT / N-GaN肖特基屏障UV检测器的性能分析
4. Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors [C] . OptoElectronics and Communications Conference . 2009

机译：Ni / GaN Schottky Junction红斑狼疮尿布探测器的制造与表征
5. Fabrication, Characterization and Simulation of Sandwich Structure GaN Schottky Diode Ionizing Radiation Detectors. [D] . Wang, Jinghui. 2014

机译：三明治结构GaN肖特基二极管电离辐射探测器的制作，表征和仿真。
6. The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2 [O] . Lin-Yue Liu, Ling Wang, Peng Jin, 2017

机译：Ni / 4H-SiC肖特基二极管辐射探测器的制造与表征其敏感面积高达4 cm2
7. Realization of erythemal UV detectors using Ni/GaN schottky junctions [O] . Lui HF, Fong WK, Surya C 2009

机译：使用Ni / GaN肖特基结实现红斑紫外线探测器
8. Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016. [R] . Zhao, B. H., Derenge, M. A., Graziano, M. B., 2016

机译：FY2016体积GaN衬底上垂直氮化镓功率肖特基二极管的制备与表征。

Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors

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