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BEHAVIOR OF ULTRA FINE METALLIC PARTICLES (~10 nm) ON SILICON WAFER SURFACE

机译:超细金属颗粒(〜10nm)在硅晶片表面上的行为

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Ultra fine particles with diameter of several to several hundreds of nanometers were adhered onto the Si surface and the removal efficiency of the ultra fine particles using various cleaning solutions was investigated. It has been found that the conventional cleaning methods are unacceptable for removing Au ultra fine particles with diameter of less than several tens of nanometers. In addition, it has also been found that particle removal by chemical etching, such as DHF-H{sub}2O{sub}2, causes increased surface roughness due to local chemical reactions.
机译:粘附到直径几到几百纳米的超细颗粒粘附到Si表面上,并研究了使用各种清洁溶液的超细颗粒的去除效率。已经发现,传统的清洁方法对于除去直径小于几十纳米的Au超细颗粒是不可接受的。另外,还发现通过化学蚀刻的颗粒除去,例如DHF-H {Sub} 2O} 2,导致由于局部化学反应引起的表面粗糙度增加。

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