首页> 外文会议>International Symposium on Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing >EFFECTS OF RESIDUAL IRON CONTAMINATION INTRODUCED DURING WET CHEMICAL PROCESSING ON THIN OXIDE BREAKDOWN AND RELIABILITY CHARACTERISTICS
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EFFECTS OF RESIDUAL IRON CONTAMINATION INTRODUCED DURING WET CHEMICAL PROCESSING ON THIN OXIDE BREAKDOWN AND RELIABILITY CHARACTERISTICS

机译:湿化学加工在薄氧化氧化物分解及可靠性特性期间剩余铁污染的影响

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摘要

The effects of residual iron contamination introduced during wet chemical processing on subsequent thermal oxide characteristics are investigated. Iron concentration is measured using a-diffusion length technique applicable to real-time line monitoring. The density of gate oxide weak spots is given as a function of iron contamination level for oxide thicknesses ranging from 75 to 200A. Reduction of oxide thickness from 20 nm to 10 nm requires a reduction in iron contamination by 100 times. Iron contamination limits concerning gate oxide integrity are established.
机译:研究了在湿化学加工过程中引入的残余铁污染对随后的热氧化物特性的影响。使用适用于实时线监测的扩散长度技术测量铁浓度。栅极氧化物薄斑的密度作为氧化物厚度范围为75至200a的铁污染水平的函数。将氧化物厚度从20nm至10nm的降低需要将铁污染降低100倍。建立了有关栅极完整性的铁污染限制。

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