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Cleaning and Damage Performance of Single Wafer Cleaning Tools using Physical Removal Forces

机译:单晶圆清洁工具使用物理移除力清洁和损伤性能

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We evaluated the trade off between damage generation and particle removal of single wafer aerosol spray and megasonic cleaning tools. This was done by the calculation of the local particle removal rates of 30nm silica and the local damage fluxes of ~20nm wide amorphous-Si lines. Cleaning and damage non-uniformities observed for aerosol cleaning were due to different exposure times to the spray nozzle. The non-uniformities for megasonic cleaning were due to different exposure times to the rod as well as to non-equivalent acoustic energy transmission across the wafer. Furthermore the extent of cleaning for equivalent damage generation was shown to be comparable for both techniques, but far from specification for the experimental conditions used here.
机译:我们评估了损伤生成和颗粒去除单晶片气溶胶喷雾和兆声清洗工具之间的折衷。这是通过计算30nm二氧化硅的局部颗粒去除率和〜20nm宽无定形线的局部损伤通量的计算来完成的。对于气溶胶清洁观察到的清洁和损坏的非均匀性是由于喷嘴的不同曝光时间。兆声清洁的不均匀性是由于杆的不同曝光时间以及晶片上的非等效声能传输。此外,对于两种技术,显示出对等效损伤产生的清洁程度,但是对于这里使用的实验条件的规范相当。

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