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A Study of Thermal-Chemical Polishing for CVD Diamond Thin Films

机译:CVD金刚石薄膜热化学抛光研究

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Chemical vapor deposition (CVD) diamond thin films are widely used in modern industries. However, due to the nature of polycrystalline, thin films are required to be polished in the final process to increase its surface quality. Thermal-chemical polishing is known for its less processing time and low cost. In this paper, the experiments are carried out to observe the effect of processing conditions such as temperature, rotational speed, polishing pressure, and substrate material on the surface roughness and on the material removal rate of the chemical vapor deposition diamond (CVDD). At the same time, the processing mechanism for this thermal-chemical polishing is investigated, and a polishing model is built for comparison with the experiment results. The results show that the material removal rate is affected mainly by the diffusing rate in the Fe-C polishing system. By using the model, the approximate value of material removal rate can be calculated according to the polishing temperature.
机译:化学气相沉积(CVD)金刚石薄膜广泛用于现代行业。然而,由于多晶体的性质,需要在最终过程中抛光薄膜以增加其表面质量。热化学抛光以其较少的加工时间和低成本已知。在本文中,进行实验以观察加工条件如温度,转速,抛光压力和基板材料对表面粗糙度的影响以及化学气相沉积金刚石(CVDD)的材料去除率。同时,研究了该热化学抛光的加工机构,建立了抛光模型,以与实验结果进行比较。结果表明,材料去除率主要受到Fe-C抛光系统中的漫射速率影响。通过使用该模型,可以根据抛光温度计算材料去除率的近似值。

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