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Design and Simulation of a Novel Nano Structure Quantum Well Voltage Regulator to have a Lower Regulated Voltage

机译:新型纳米结构量子阱电压调节器的设计和仿真具有较低的调节电压

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In this paper we present a novel nano structure quantum well voltage regulator (QWVR) to regulate a voltage in very low voltages, that can be used in low voltage and low power IC's. This structure is based on the double electron layer tunneling transistor (DELTT). We used the depletion mode MOSFET in series with the DELTT and before it to eliminate higher states of resonant tunneling current. Simulation results show that the voltage regulation is occurred around 0.3v. A desired regulated voltage is obtained with a specific value of the thickness and the concenturation of the GaAs and the AlGaAs epilayers. To simulating the proposed structure, the stationary viscous quantum hydrodynamic model has been used.
机译:在本文中,我们提出了一种新型纳米结构量子阱电压调节器(QWVR),以调节极低电压的电压,可用于低电压和低功率IC。该结构基于双电子层隧道晶体管(DELTT)。我们将耗尽模式MOSFET与DELTT串联串联,以消除谐振隧道电流的更高状态。仿真结果表明,电压调节发生在0.3V大约0.3V。利用GaAs和Algaas脱落器的厚度和同比获得所需的调节电压。为了模拟所提出的结构,已经使用了静止粘性量子流体动力学模型。

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