Quantum-Monte Carlo simulation of ultra-short DGSOI devices: A Multi-Subband approach

摘要

State-of-the-Art devices in mass production are approaching to the performance limit of traditional MOSFET as the critical dimensions are shrunk. Multi-gate devices based on SOI technology, are one of the best candidates to become a standard solution to overcome the problems arising from such aggressive scaling. Moreover, the flexibility of SOI wafers and processes allows the use of different channel materials and substrate orientations to enhance the performance of CMOS circuits. This paper studies the electron transport in DGSOI devices with aggressive scaling and different confinement and transport directions using a Multi-Subband Monte Carlo simulator (MSB-MC).