An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations

摘要

In this paper we propose and validate a simple approach to empirically account for quantum effects in the transport direction of MOS transistors (i.e. source and drain tunneling and delocalized nature of the carrier wavepacket) in multi-subband Monte Carlo simulators, that already account for quantization in the direction normal to the semiconductor-oxide interface by solving the 1D Schrodinger equation in each section of the device. The model has been validated and calibrated against ballistic non-equilibrium Green's function simulations over a wide range of gate lengths, voltage biases and temperatures. The proposed model has just one adjustable parameter and our results show that it can achieve a good agreement with the NEGF approach.