In this paper, an experimental characterization of Negative Bias Temperature Instability (NBTI) effects on a single pMOSFET and CMOS inverter is done. The characterization has been performed for static and dynamic stresses with frequencies ranging from DC to GHz. The results show that NBTI produces a threshold voltage shift (??VT) on pMOSFETs, which is frequency independent. For DC stress, this ??VT is double than in the AC case. In a CMOS inverter, NBTI produces a voltage transfer curve shift which is expected theoretically. As ??VT, in a single pMOSFET, the voltage transfer curve shift in a CMOS inverter is frequency independent and almost double for DC stress in comparison to the AC case.
展开▼
机译：本文完成了对单个PMOSFET和CMOS逆变器对负偏置温度不稳定性（NBTI）效应的实验表征。已经对具有从DC到GHz的频率进行静态和动态应力进行了表征。结果表明，NBTI在PMOSFET上产生阈值电压移位（ΔθV T ），其是频率独立的。对于直流应力，这vt比在交流案件中是双倍的。在CMOS逆变器中，NBTI产生预期的电压传输曲线偏移。在单个PMOSFET中，CMOS逆变器中的电压传输曲线偏移是与AC外壳相比的DC应力的频率无关，几乎加倍。
展开▼
