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On the computation of high frequency current in nanoelectronic ballistic devices

机译:纳米电子弹道装置高频电流计算

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A discussion about the accurate computation of the total time-dependent (conduction plus displacement) current in quantum and classical devices is presented. In particular, two different methods for the practical computation of the total time-dependent current are compared. The first method computes the conduction and the displacement currents from the rate of particles crossing a particular surface and the time-dependent variations of the electric field there. The second method uses the Ramo-Shockley theorem to compute the total time-dependent current on that surface from the knowledge of the particle-trajectory dynamics in a 3D volume and the time-dependent variations of the electric field on the boundaries of that volume, As an example, we present the computation of the total tunneling time-dependent current in a Resonant Tunneling Diode. From a computational point of view, it is shown that both methods achieve local current conservation, but the second is preferred because it is free from "spurious" peaks. Finally, the second method is used to accurately show the viability of a 200GHz harmonic generation from 50 GHz input signal for a Driven Tunneling Device.
机译:提出了关于昆腾和经典设备中总时间依赖(传导加位)电流的精确计算的讨论。特别地,比较了两种不同的计算总时间相关电流的方法。第一方法从穿过特定表面的颗粒的速率和在那里的电场的时间依赖性变化来计算导通和位移电流。第二种方法使用的拉莫-肖克莱定理来计算该表面上的总时间相关的电流从粒子轨迹动力学的知识在3D体积和电场对该体积的边界依赖于时间的变化,作为示例,我们介绍了谐振隧道二极管中的总隧道时间相关电流的计算。从计算的角度来看,表明两种方法都实现了局部电流保护,但第二种方法是优选的,因为它没有“虚假”峰。最后,第二种方法用于精确地示出从50GHz输入信号的200GHz谐波产生的可行性,用于驱动的​​隧道设备。

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