3D Parallel Finite Element Monte Carlo Simulator With Quantum Corrections Using Density Gradient Approach

摘要

Novel thin-body architectures with non-planar geometries are foreseen to replace bulk devices at the 18 nm gate length technology and beyond because they have a superior control of electrostatic and can deliver the 2008 ITRS prescribed on-current. We report on the development of a parallel 3D Monte Carlo simulator which uses unstructured tetrahedral elements to describe the geometry of these new architectures. We also describe an incorporation of quantum corrections using the density gradient method since the quantum confinement plays an important role. Finally, we present test simulations of a 10 nm gate length double gate MOSFET with a body thickness of 6 nm, presenting the approach to minimise the magnitude of self forces originating from the use of tetrahedral elements.