Laser scribing of very large 2,6m x 2,2m a-Si: H thin film photovoltaic modules.

摘要

Laser scribing for thin-film photovoltaic cells is the technique of choice to obtain monolithic series connection and high throughputs in the industrial production scale of amorphous silicon solar modules. The characterization of laser scribes is presented. This paper is focused on P1 and P2 laser scribing processes which allow the isolation of the front contact belonging to consecutive cells and the interconnection between front transparent conductive oxide and back metallic layers, respectively. Several laser scribing parameters have been checked to obtain successfully an optimized value for both Pl isolation and P2 contact resistance.