首页> 外文会议>International Cryogenic Materials Conference >HIGH-PRESSURE OXYGENATION OF MT-YBCO: THE WAY TO REDUCE THE OXYGENATION TIME, TO PREVENT MACROCRACKING, AND TO OBTAIN MATERIALS WITH HIGH CRITICAL CURRENTS.
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HIGH-PRESSURE OXYGENATION OF MT-YBCO: THE WAY TO REDUCE THE OXYGENATION TIME, TO PREVENT MACROCRACKING, AND TO OBTAIN MATERIALS WITH HIGH CRITICAL CURRENTS.

机译:MT-YBCO的高压氧化:减少氧合时间的方式,防止大裂纹,并获得高临界电流的材料。

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The oxygenation of MT-YBCO under isostatic oxygen pressure (up to 16 MPa) at 900-800 °C allowed reduced process time, lower macrocracking, and reduced microcracks. Additionally higher critical currents, trapped fields and mechanical characteristics can be attained. At 77 K thin-walled MT-YBCO had a jc in the ab plane of 85 kA/cm2 at 0 T and higher than 10 kA/cm2 in fields up to 5 T and the irreversibility field was 9.8 T. In the c-direction jc was 34 kA/cm2 in 0 T and higher than 2.5 kA/cm2 in a 10 T field. At 4.9 N-load the micohardness, Hv, was 8.7±0.3 GPa in the ab-plane and 7.6±0.3 GPa in the c-direction. The fracture toughness, K1C, was 2.5±0.1 MPa·m0.5 (ab-plane) and 2.8±0.24 MPa·m0.5 (c-direction). The samples with a higher twin density demonstrated a higher jc, especially in applied magnetic field. The twin density correlates with the sizes and distribution of Y211 grains in Y123. The thin-walled ceramics that demonstrated the highest jc contained about 22 twins in 1 μm and were practically free from dislocations and stacking faults. The maximal trapped field of the block of thin-walled ceramic oxygenated at 900-800 °C and 16 MPa was doubled as compared to that oxygenated at low temperature under ambient pressure.
机译:在900-800℃下等静压氧气压力(高达16MPa)下MT-YBCO的氧合允许减少处理时间,降低MacROcrack和减少的微裂纹。另外可以获得更高的临界电流,捕获的场和机械特性。在77K薄壁MT-YBCO时,在0吨的AB平面中具有85ka / cm2的AB平面,最高可达5吨的区域,而不可逆转的场在C方向上为9.8 T. JC为34ka / cm2,在0 t和10 t字段中高于2.5ka / cm2。在4.9 n-LOAD时,在AB平面中的Micohardness,HV,在C方向上为7.6±0.3GPa。断裂韧性K1C为2.5±0.1MPa·M0.5(AB平面)和2.8±0.24MPa·M0.5(C方向)。具有较高双密度的样品显示出更高的JC,特别是在施加的磁场中。双密度与Y123中Y211颗粒的尺寸和分布相关。显示最高JC的薄壁陶瓷在1μm中含有约22双胞胎,并且实际上没有位于脱位和堆叠故障。与环境压力下的低温下的氧化相比,在900-800℃和16MPa的薄壁陶瓷氧化块的最大被捕获的场翻倍。

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