Electrical performance of chlorine-treated AlGaN MOS diodes with i-ZnO insulator

摘要

The intrinsic zinc oxide (i-ZnO) film deposited by a vapor cooling condensation system was used as the gate dielectric layer of the AlGaN metal-oxide-semiconductor (MOS) diodes. The chlorine surface treatment of AlGaN was utilized to reduce the surface states resided on the AlGaN surface. Comparing with the untreated AlGaN MOS diodes, the chlorine-treated AlGaN MOS diodes revealed a lower leakage current and a lower interface states density. The experimental results indicated that the chlorine surface treatment could effectively improve the quality of the i-ZnO/AlGaN interface and the electrical performance of the AlGaN MOS diodes with i-ZnO insulator layer.