Improvement in metrology on new 3D-AFM platform

摘要

According to the 2007 edition of the ITRS roadmap, the requirement for CD uniformity of isolated lines on a binary orattenuated phase shift mask is 2.lnm (3σ) in 2008 and requires improvement to1.3 nm (3a) in 2010. In order to meet theincreasing demand for CD uniformity on photo masks, improved CD metrology is required. A next generation AFM,InSightTM 3DAFM, has been developed to meet these increased requirements for advanced photo mask metrology. Thenew system achieves 2X improvement in CD and depth precision on advanced photo masks features over the previousgeneration 3D-AFM. This paper provides measurement data including depth, CD, and sidewall angle metrology. Inaddition the unique capabilities of damage-free defect inspection and Nanoimprint characterization by 3D AFM arepresented.