DC#x2014;40-GHz SP4T switch IC using high-breakdown-voltage InGaAs/InP composite-channel HEMTs with an InAlP etch stopper

机译：DC-40-GHz SP4T开关IC采用高击穿电压IngaAs / InP复合通道Hemts，具有INALP蚀刻塞子

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This paper presents a wideband and high power-handling single-pole four-throw (SP4T) switch IC using InGaAs/InP composite-channel (CC) HEMTs. Owing to the CC structure with an InAlP barrier, the input power for P1dB of 19.4 dBm is 6 dB higher than that of our conventional InGaAs single-channel HEMT switch, with identical wideband performance of ∼40 GHz.

机译：本文介绍了一种使用IngaAs / InP复合通道（CC）HEMTS的宽带和高功率处理单极四掷（SP4T）开关IC。由于CC结构具有Inalp屏障，P1DB的输入功率为19.4 dBm的6 dB，比我们的传统InGaAs单通道HEMT开关高6dB，具有相同的宽带性能为〜40 GHz。

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《International Conference on Indium Phosphide Related Materials》|2008年||共2页
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Kamitsuna Hideki; Sugiyama Hiroki; Toshihiko Kosugi; Haruki Yokoyama; Koichi Murata; Yasuro Yamane; Takatomo Enoki;
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中图分类 TN248.4-53;
关键词
InAlP etch stopper; InP-based HEMT; composite channel; power-handling capability; switch; wideband;

机译：INALP蚀刻停止;基于INP的HEBT;复合通道;电源处理能力;开关;宽带;

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专利

1. A 125-GHz 140-mW InGaAs/InP composite-channel HEMT MMIC power amplifier module [J] . Akihiko Hirata, Hiroki Sugiyama, Hiroyuki Takahashi, IEICE Electronics Express . 2009,第24期

机译：125 GHz 140 mW InGaAs / InP复合通道HEMT MMIC功率放大器模块
2. Lateral Scale Down of InGaAs/InAs Composite-Channel HEMTs With Tungsten-Based Tiered Ohmic Structure for 2-S/mm $g_{m}$ and 500-GHz $f_{T}$ [J] . Hideaki Matsuzaki, Takashi Maruyama, Toshihiko Koasugi, IEEE Transactions on Electron Devices . 2007,第期

机译：具有基于钨的分层欧姆结构的InGaAs / InAs复合通道HEMT的横向缩小，尺寸为2-S / mm $ g_ {m} $和500-GHz $ f_ {T} $
3. On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness [J] . Meneghesso G., Neviani A. IEEE Transactions on Electron Devices . 1999,第1期

机译：GaInAs / InP复合沟道HEMT的GaInAs沟道厚度可变时的开态和关态击穿
4. DC#x2014;40-GHz SP4T switch IC using high-breakdown-voltage InGaAs/InP composite-channel HEMTs with an InAlP etch stopper [C] . Kamitsuna Hideki, Sugiyama Hiroki, Toshihiko Kosugi, International Conference on Indium Phosphide Related Materials . 2008

机译：DC-40-GHz SP4T开关IC采用高击穿电压IngaAs / InP复合通道Hemts，具有INALP蚀刻塞子
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition [O] . Ludovico Megalini, Simone Tommaso Šuran Brunelli, William O. Charles, 2018

机译：应变补偿的InGaAsP超晶格用于通过金属有机化学气相沉积减少在精确取向的（001）图案化Si衬底上生长的InP的缺陷
7. Wavelength-sized, tunable nanocavity in deeply etched InP/InGaAsP/InP photonic crystals [O] . Kicken, HHJE Harm, Barbu, I Ionut, Heijden, van der, RW Rob, 2009

机译：深度蚀刻的InP / InGaAsP / InP光子晶体中的波长大小可调纳米腔

DC#x2014;40-GHz SP4T switch IC using high-breakdown-voltage InGaAs/InP composite-channel HEMTs with an InAlP etch stopper

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