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Comparative Study of Fabrication of HfC-HfB_2-SiC Composites by Spark Plasma Sintering and Hot Pressing

机译:火花等离子体烧结和热压制备HFC-HFB_2-SIC复合材料的比较研究

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HfC-HfB_2-SiC composites were fabricated by spark plasma sintering (SPS). The densification behaviour and microstructure evolution were compared with those obtained by hot pressing (HP). Almost fully dense material was produced by SPS in 2 minutes of dwell time at 2100°C, heating rate 100°C/min. In order to achieve high densities by hot pressing (1880°C, 30 MPa and 60 minutes of dwell time), the use of a sintering aid, i.e. silicon nitride, was necessary. The microstructures of the composites processed by the two different techniques were fine and uniform. The distribution of the phases was homogeneous. Besides crystalline HfC and HfB_2, secondary amorphous phases were found in both the composites: HfO_2, Hf-Si-C-O, Hf-Si-C. The amount of SiC decreases slightly in the densest SPS composite, while in the hot-pressed material it increases. The densification behaviour and microstructural evolution of the composites are discussed in terms of the starting composition and of the applied sintering technique.
机译:通过火花等离子体烧结(SPS)制造HFC-HFB_2-SIC复合材料。将致密化行为和微观结构进化与热压(HP)获得的致密化行为和微观结构演变进行了比较。几乎完全致密的材料在2分钟的停留时间在2100°C,加热速率100°C / min时产生了几乎完全致密的材料。为了通过热压达到高密度(1880℃,30MPa和60分钟的停留时间),需要使用烧结助剂,即氮化硅。由两种不同技术加工的复合材料的微观结构均匀且均匀。阶段的分布是均匀的。除了结晶HFC和HFB_2之外,在复合材料中发现二次无定形相:HFO_2,HF-Si-C-O,HF-Si-C。在更密集的SPS复合材料中,SiC的量略微降低,而在其增加的热压材料中。基于起始组合物和施加的烧结技术,讨论了复合材料的致密化行为和微观结构演化。

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