Arsenic-doped narrow-gap HgCdTe epilayers studied by infrared modulation spectroscopy

摘要

We outline experimental data recently established in our study of in-situ arsenic (As) doped narrow-gap Hg_(1-x)Cd_xTe films by infrared modulation spectroscopy. After a brief introduction of the step-scan Fourier transform infrared spectrometer-based modulation spectroscopic techniques, impurity levels and photomodulation mechanisms in As-doped HgCdTe epilayers are surveyed based on infrared modulation spectroscopic data, and the possibility of identifying cut-off wavelength and vertical uniformity of HgCdTe epilayers is indicated. The results illustrate that the infrared modulation spectroscopy will play an important role in optical characterization of narrow-gap semiconductors.