Growth of InN by Plasma-Assisted Molecular Beam Epitaxy on InN/GaN and p-GaN Templates

摘要

InN is grown by plasma-assisted molecular beam epitaxy on templates prepared by hydride vapor phase epitaxy. These uniques templates consist of InN/GaN and p-GaN epilayers. Homoepitaxy creates challenges for surface preparation prior to growth. Quality InN layers as seen by X-ray diffraction and photoluminescence data are developed when growing on HVPE InN/GaN templates. InN growth on p-GaN provides a novel solution for p-down diodes utilizing InN. The in situ surface preparation of these templates is a challenge preventing undesirable band bending at the hetero-interface. Two in situ surface preparations are attempted with no significant impact on the quality of the InN layer.