首页> 外文会议>Annual International EOS/ESD Symposium >Preventing arcing damage on radio frequency device wafer by controlling ESD resistivity level of water for saw and wash
【24h】

Preventing arcing damage on radio frequency device wafer by controlling ESD resistivity level of water for saw and wash

机译:通过控制锯和洗涤的ESD电阻率水平来防止射频器件晶片上的电弧损坏

获取原文

摘要

The current Electrostatic Discharge (ESD) resistivity limit of water during the wafer saw and wash process is found to induce polyimide tribocharging. Accumulated static energy discharges on metal 6 of the Radio Frequency (RF) device, in the form of electrical arcs, cause dielectric passivation layer breakdown and Electrical Overstress (EOS). To solve this problem, an experiment is done to determine the most efficient ESD resistivity level of water for arcing damage prevention.
机译:发现晶片锯和洗涤过程中的水的电流静电放电(ESD)电阻率极限诱导聚酰亚胺摩擦。以电弧形式的射频(RF)装置的金属6上的累积静电能量排放,导致介电钝化层击穿和电过光(EOS)。为了解决这个问题,完成了一个实验,以确定用于电弧损伤的水的最有效的ESD电阻率水平。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号